JPH055373B2 - - Google Patents

Info

Publication number
JPH055373B2
JPH055373B2 JP63279529A JP27952988A JPH055373B2 JP H055373 B2 JPH055373 B2 JP H055373B2 JP 63279529 A JP63279529 A JP 63279529A JP 27952988 A JP27952988 A JP 27952988A JP H055373 B2 JPH055373 B2 JP H055373B2
Authority
JP
Japan
Prior art keywords
region
layer
semiconductor
conductivity type
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63279529A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01160053A (ja
Inventor
Uiremu Rudeitsukufuitsue Adorianusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPH01160053A publication Critical patent/JPH01160053A/ja
Publication of JPH055373B2 publication Critical patent/JPH055373B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP63279529A 1987-11-09 1988-11-07 横形高圧トランジスタ Granted JPH01160053A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8702671A NL8702671A (nl) 1987-11-09 1987-11-09 Laterale hoogspanningstransistor.
NL8702671 1987-11-09

Publications (2)

Publication Number Publication Date
JPH01160053A JPH01160053A (ja) 1989-06-22
JPH055373B2 true JPH055373B2 (en]) 1993-01-22

Family

ID=19850886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63279529A Granted JPH01160053A (ja) 1987-11-09 1988-11-07 横形高圧トランジスタ

Country Status (6)

Country Link
US (1) US4987469A (en])
EP (1) EP0316988B1 (en])
JP (1) JPH01160053A (en])
KR (1) KR0138917B1 (en])
DE (1) DE3871908T2 (en])
NL (1) NL8702671A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
CA2114356A1 (en) * 1993-02-23 1994-08-24 Kimberly A. Gaul Wallpaper remover
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.
JP3768079B2 (ja) * 2000-07-25 2006-04-19 シャープ株式会社 トランジスタ
CN104518008B (zh) * 2013-09-29 2017-12-22 北大方正集团有限公司 一种结型场效应管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936863A (en) * 1974-09-09 1976-02-03 Rca Corporation Integrated power transistor with ballasting resistance and breakdown protection
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
JPS57162365A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region
JPH0654777B2 (ja) * 1985-02-12 1994-07-20 キヤノン株式会社 ラテラルトランジスタを有する回路

Also Published As

Publication number Publication date
EP0316988B1 (en) 1992-06-10
NL8702671A (nl) 1989-06-01
DE3871908T2 (de) 1993-01-14
DE3871908D1 (de) 1992-07-16
KR890008993A (ko) 1989-07-13
KR0138917B1 (ko) 1998-06-01
US4987469A (en) 1991-01-22
EP0316988A1 (en) 1989-05-24
JPH01160053A (ja) 1989-06-22

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees